Scope

The aim of the ESSDERC Conference is to provide an annual European forum for the presentation and discussion of recent advances in solid-state devices and technologies. ESSDERC and its sister Conference ESSCIRC, which deals with solid-state circuits, are governed by a unitary Steering Committee, despite the traditional separation of the two communities. To date, the increasing integration level made available by the silicon technology, and the related opportunities for system-on-chip design, make it clear that more interaction among technologists, device experts, and circuit designers becomes necessary. In recognition of this need, in the year 2002 the two Conferences will be held jointly for the first time. ESSDERC and ESSCIRC are keeping separate Technical Program Committees but will share a number of keynote presentations in plenary sessions. Also, delegates registered for either Conference, are encouraged to attend any of the available parallel sessions.

In addition to the new Conference format, ESSDERC 2002 is deeply revising its traditional themes of interest, with more emphasis on advanced device concepts, nanotechnologies, quantum and molecular devices, ITRS roadblocks and new process steps, (bio)sensors and displays, as detailed below.

 Topics
 

Advanced Devices

Deep submicron scaling issues, device physics and performance, low-voltage CMOS devices, SOI devices, SiGe devices, low- and high-temperature operation, hot–carrier effects, gate-dielectric reliability, noise, process-induced damage, ESD, EMI.

Advances in integration for ULSI, SOI, memories (dynamic, static, NV, novel types), bipolars, ASICs, MPU, multi-function ICs, patterning techniques, micromachining, shallow junctions, RTP, isolations and interconnects, optical interconnects, silicidation, thin dielectrics, high-k gate dielectrics, low-k interlevel dielectrics, cleaning issues, physical and structural characterisation, surface preparation, module optimisation, defect control, equipment issues, monitoring, metrology.

Two- and three-dimensional modelling of processes, devices, equipments, isolations and interconnects, quantum devices; physical-device models, yield models, electrical-characterization techniques and parameter extraction, mixed electrical-thermal modelling and simulation.

High-voltage devices, MOS-controlled power devices, e.g., DMOS, IGBT, smart-power devices and ICs, high-temperature operation, SiC devices, novel device concepts, low-inductance interconnects, reliability of contacts and bonds, cooling issues.

Fabrication and operation of single-electron devices, molecular devices, quantum dots, quantum wires, quantum gates; self-assembling structures; novel devices and principles of operation.

CCD and CMOS imagers, radiation sensors, infrared sensors, physical sensors and actuators (pressure, temperature, acceleration, VOC, etc.), microfluidics, uTAS, biochemical sensors and actuators, array technology, active displays, display-device technologies, polycrystalline TFTs, field-emission devices, sensor and microsystem packaging issues.

Conducting polymers, semiconducting polymers, flat-panel displays, polymer transistors, polymer light-emitting diodes and optoelectronic devices, giant flexible displays.

[Home][General Info][Scope and Topics][Invited Speakers][Workshops]
 [Author Info][Schedule][Organization] [Committee][Registration][Contact Info]

© 2001 ARCES-DEIS, University of Bologna